Fig. 5: Electrical manipulation of magnetic order in the lateral CrSBr channel.
From: Doping-induced magnetic phase transition enables all-electrical spin control in CrSBr
a Bias voltage (VDS)-dependent MR of the CrSBr device (Sample D2) measured at 2 K with a fixed VG = 0 V. The AFM MR diminishes while the spin-valve MR persists as VDS increases, indicative of the STT effect within the CrSBr channel. b The AFM MR and the spin-valve MR as a function of VDS, with the top axis representing the corresponding source-drain current density jDS. c Schematic of STT-driven magnetic order manipulation in the lateral CrSBr channel for small (top) and large (bottom) jDS. The intensified spin current enhances STT effects, switching the CrSBr channel from initial AFM order (blue region) to the FM order (red region). d MR of the same device measured at various temperatures from 2 K to 150 K with VDS = 0.2 V and VG = 0 V, illustrating the disappearance of the spin-valve MR near 10 K. e Bias voltage-dependent MR of the same device measured at 10 K with VG = 0 V. The AFM MR decreases with increasing VDS, further supporting the presence of the STT effect at elevated temperatures.
