Fig. 6: SOI modulation at the Pb/MoSe₂ interface.

ARPES data for the Г₁- and H-hotspots (a–d respectively) for the 0.25- and 0.5-nm thickness (a–d) of the Pb overlayer, represented in the same way as the data on bare MoSe₂ in Fig. 4c, d. The increase of Δ_bs upon the deposition of Pb identifies the increase of SOI in MoSe₂ caused by the proximity effect.