Fig. 3: Structural characterization of 2 and 3.

a Molecular structure of 2 and 3 in the solid state. H atoms are omitted for clarity except for H on the Ga; Me-, iPr-, and Dip-substituents are depicted as a wireframe for simplicity. Selected bond lengths (Å) and angles (°) for 2: Ga1-N1 1.932(17), Ga1-N2 1.919(16), Ga1-C27 2.076(21); N1-Ga1-N2 89.59(7), N1-Ga1-C27 101.79(8), N2-Ga1-C27 117.09(8). For 3: Ga1-N1 1.902(18), Ga1-N2 1.902(21), Ga1-C27 2.089(23); N1-Ga1-N2 88.82(8), N1-Ga1-C27 118.61(9), N2-Ga1-C27 103.65(9). b EPR spectrum of compound 3 measured in toluene solution at room temperature. X-Band EPR spectrum at a microwave frequency of 9.2041 × 103 MHz at 293 K.