Fig. 3: Electrical characteristics of MoS2 FETs based on high-κ Sm2O2SO4 dielectrics.
From: High-κ samarium oxysulfate dielectric for two-dimensional electronics with enhanced gate coupling
a Schematic of the top-gated MoS2 FETs. b, c The output curves and transfer curves of a typical MoS2 FET with Sm2O2SO4 top gate. Inset: OM image of Sm2O2SO4/MoS2 FET. (channel width/channel length: WCH/LCH = 2.6 µm/7.5 µm, MoS2 thickness: 3.1 nm). Scale bars: 5 µm. d SS versus Ids extracted from the transfer curves. The dashed line marks 60 mV dec−1. e The transfer curves curves of the same device measured at 300, 400 and 500 K. Insets: corresponding hysteresis widths and OM image of Sm2O2SO4/MoS2 FET. Scale bars: 5 µm. f, g EDS elemental mapping images and a cross-sectional STEM image of the a Sm2O2SO4/MoS2 heterointerface. Scale bars: 10 and 1 nm. h Plane-averaged differential charge density of the Sm2O2SO4/MoS2 vdW heterostructure as a function of position along z direction.
