Fig. 3: Dependence of SVE on bias current and temperature for device A.
From: Two-dimensional magnetic tunnel p-n junctions for low-power electronics
a V-B curves for different bias currents at 10 K. b V-B curve under a bias current I = −1 nA corresponding to SVE = 15,720%. c I-V curves in the parallel and antiparallel magnetization alignments. d SVE as a function of I extracted from the V-B (points) and I-V (line) curves. e Dependence of SVE on T and I. The dotted line shows the conductance versus T in the parallel magnetization alignment.
