Fig. 4: Magnetic characteristics and current-induced SST switching in altermagnetic RuO2-pMTJ devices.
From: Magnetic memory driven by spin splitting torque in nonrelativistic collinear antiferromagnet
a Schematics of the MTJ unit cell in MRAM. b Magnetic properties (M/Ms-Hz curves) in RuO2-pMTJ stack, where the blue, yellow, and purple arrows represent the magnetization of the Co/Pt multilayer, the top reference and bottom recording CoFeB layers, respectively. c Tunneling resistance (R) and TMR ratio as a function of the magnetic field (Hz), with the 54% TMR ratio indicating the high quality of MTJ. d Current-driven SST switching in the RuO2-pMTJ device under different magnetic fields. e Resistance vs. applied magnetic field curves measured under 20 μA current. f Evolution of the probability of switching P as a function of the P to AP (AP to P) state obtained from the result shown in e.
