Fig. 6: Transmission electron microscopy (TEM) analysis of reconfigured Te.
From: On-device cryogenic quenching enables robust amorphous tellurium for threshold switching
a Bright-field transmission electron microscope (BF-TEM) image of a Te device after programming to HRS at 80 K and post-annealing at 273 K for 1 hour. The scale bar is 200 nm. b Fast Fourier transform (FFT) patterns for areas 1–4 within the programming region. c High-angle annular dark-field scanning TEM (HAADF-STEM) image of trigonal helical Te between areas 1 and 2. The scale bar is 10 nm. The inset TEM image indicates a lattice constant of the trigonal phase after crystallization. The inset scale bar is 0.4 nm. d Moiré pattern of Te within the intermediate region (area 5). Parallel and vertical helical Te chains along the zone axis of [0001] coexist in area 5. Selected area electron diffraction (SAED) patterns from e the programming region (between areas 1–2) and f the non-programming region (including area 6). The aperture size of the SAED pattern is ~100 nm. Both scale bars are 5 nm−1.
