Table. 1 The band offsets in GeTe and Ge₆₃Cu₆Bi₆Te₆₃S₁₂ among several valence band maxima, including VBM1 at the L point, VBM2 along the Γ-K direction and VBM3 along the Γ-X direction in Supplementary Fig. 8

From: Nanotwin architecture and ultra-high valley degeneracy lead to high thermoelectric performance in GeTe-based thermoelectric materials