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Upwind electromigration of sub-10-nm metallic nano-interconnects
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  • Published: 06 March 2026

Upwind electromigration of sub-10-nm metallic nano-interconnects

  • Youran Hong  ORCID: orcid.org/0009-0001-6056-81031,
  • Tianqi Deng  ORCID: orcid.org/0000-0002-9826-71382,
  • Xiyao Li  ORCID: orcid.org/0000-0002-5767-50391,3,
  • Zhongkang Han  ORCID: orcid.org/0000-0003-1489-68241,
  • Jian Wang  ORCID: orcid.org/0000-0001-5130-300X4,
  • Kexing Song  ORCID: orcid.org/0000-0002-0958-20143,
  • Ze Zhang  ORCID: orcid.org/0000-0002-1739-90331 &
  • …
  • Jiangwei Wang  ORCID: orcid.org/0000-0003-1191-07821 

Nature Communications , Article number:  (2026) Cite this article

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We are providing an unedited version of this manuscript to give early access to its findings. Before final publication, the manuscript will undergo further editing. Please note there may be errors present which affect the content, and all legal disclaimers apply.

Subjects

  • Electronic devices
  • Electronic properties and materials
  • Metals and alloys

Abstract

Nanoscale electronic devices face critical reliability challenges under extreme operating conditions, where electromigration—atomic motion driven by high density current—progressively degrades metallic components. Conventional wisdom maintains that electron wind force drives atomic migration along electron flow direction in metallic interconnects. However, using an integrated in situ nanofabrication-electropulsing approach, we reveal an anomalous electromigration phenomenon in next-generation transition metal nano-interconnects at atomic scale, where surface atoms migrate against the direction of electron flow. This upwind migration demonstrates universality across different refractory nano-interconnects including tungsten and molybdenum. First-principles calculations attribute this reversal to the predominance of direct forces over electron wind forces in materials with complex electronic structures. Our findings challenge the existing paradigm of electromigration and hold great implications for optimizing the reliability of next-generation electronic interconnections toward extreme process.

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Data availability

The data that support the findings of this study are available within this article and its Supporting Information. Additional data is available from the corresponding authors upon request. Source data are provided with this paper.

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Acknowledgements

This work was supported by the Zhejiang Provincial Natural Science Foundation of China (LR24E010002), the National Key Research and Development Program of China (2021YFA1200201), the National Natural Science Foundation of China (U21A2051) and the Joint Fund of Henan Province Science and Technology R&D Program (225200810058).

Author information

Authors and Affiliations

  1. Center of Electron Microscopy, State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, PR China

    Youran Hong, Xiyao Li, Zhongkang Han, Ze Zhang & Jiangwei Wang

  2. Institute of Advanced Semiconductors, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, PR China

    Tianqi Deng

  3. Institute of Materials, Henan Academy of Sciences, Zhengzhou, PR China

    Xiyao Li & Kexing Song

  4. Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE, USA

    Jian Wang

Authors
  1. Youran Hong
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Contributions

J.W.W. proposed the idea, directed the project and designed the experiments. Y.H. conducted the experiments and analyzed the data. T.D. performed the DFT calculations. Y.H. and J.W.W. wrote and revised the paper. X.L., Z.H., J.W., K.S. and Z.Z. contributed to the discussion and paper revision.

Corresponding authors

Correspondence to Kexing Song, Ze Zhang or Jiangwei Wang.

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Nature Communications thanks Meng Li and the other anonymous reviewer(s) for their contribution to the peer review of this work. A peer review file is available.

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Hong, Y., Deng, T., Li, X. et al. Upwind electromigration of sub-10-nm metallic nano-interconnects. Nat Commun (2026). https://doi.org/10.1038/s41467-026-70283-9

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  • Received: 16 September 2025

  • Accepted: 21 February 2026

  • Published: 06 March 2026

  • DOI: https://doi.org/10.1038/s41467-026-70283-9

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