Fig. 4: Short-channel MoS2 FETs and logic inverter based on KBBF dielectric.
From: High-κ KBe2BO3F2 dielectric material with wide bandgap for two-dimensional electronics
a Schematic of short-channel MoS2 FET. In this structure, from bottom to top are the Si/SiO2 substrate, graphene gate, KBBF dielectric material, and MoS2 channel. b Transfer characteristic curves of MoS2 FET with channel length of 80 nm. Inset, the AFM image of short-channel MoS2 FET. Scale bar, 500 nm. c Output characteristic curves of 80 nm-channel length MoS2 FET. d The false-coloured SEM image of the logic inverter (NOT gate) consisting of two top-gated MoS2 FETs. Scale bar, 2 μm. Vin, Vout, and Vdd represent the input voltage, output voltage, and supply voltage, respectively. e Voltage transfer characteristic of the inverter. Inset, the equivalent circuit of the inverter. f Voltage gain of the inverter.
