Fig. 6: Probing the atomic and electronic structures of point defects in monolayer WSi2N4 by STM and STS.
a, b A STM topographic image (7 nm × 7 nm) (a) and the dI/dV spectrum acquired from the defect-free site (b), which is highlighted by a red circle in (a). Bias voltage U = +2.3 V, tunneling current I = 500 pA. E denotes the band gap. c, d A STM topographic image (8 nm × 8 nm) (c) and the dI/dV spectra acquired from three defect sites (d), which are highlighted by different colored arrows in (c). U = +2.3 V, I = 500 pA. e, f A STM topographic image (8 nm × 8 nm) (e) and the dI/dV spectra acquired from another defect site (f), which is highlighted by a pink arrow in (e). U = +1.5 V, I = 1000 pA. The spectra were offset vertically for better visualization. a, c Represent partially overlapping regions, with contrast adjusted to clearly distinguish defect sites from the pristine lattice.
