Fig. 7: Aggregations of point defects in MoSi2N4 monolayers.
a, b ADF-STEM images of two (a) and three (b) SiN(t) aggregations. Each individual SiN(t) is highlighted by a yellow circle. c, d ADF-STEM image of 2D SiN(t) network (c) and the corresponding ADF-STEM simulation (d). The orange dashed arrow in (c), and the blue dashed arrow in (d) mark the regions used for line intensity profiling, with the resulting profile overlaid in (d). Representative SiN(t) sites in these regions are indicated by yellow arrows. e, f Electronic band structure (e) and orbital-resolved DOSs (f) of 2D SiN(t) network. g Low-magnification ADF-STEM image of a 1D Si2Mo chain denoted by yellow arrows. h, i High-magnification ADF-STEM image (h) and corresponding ADF-STEM simulation (i) of the 1D Si2Mo chain in the region marked by the yellow box in (g). The orange dashed arrow in (h), and the blue dashed arrow in (i) mark the regions used for line intensity profiling, with the resulting profile overlaid in (i). Representative Si2Mo sites in these regions are indicated by yellow arrows. j, k Electronic band structure (j) and the orbital-resolved DOSs (k) of 1D Si2Mo chain. Scale bars: 5 Å (a–d, h, i); 5 nm (g). A Gaussian filter was applied to the ADF-STEM images in (g, h).
