Abstract
Textile electronics with digital capabilities could sense, process, and store data, while providing immersive interaction with user and their immediate surroundings. However, existing textile electronic systems are typically built on von Neumann architecture and rigid chips, limiting their seamless integration with clothing. Here, we propose a single-fibre logic/memory electronic device based on interface passivation-corrosion whose functions do not depend on traditional carrier heterojunction interfaces. The same fibre can be switched to operate as either a diode or a memristor. The diode mode remains stable under higher voltages and longer cycling periods than the state-of-the-art anion–cation heterojunction fibres. The fibre electronics are highly stretchable (up to 50%), and are compatible with industry-standard weaving techniques. We also demonstrate the application of these fibres in “AND” and “OR” logic gates, neuromorphic synapses, and textile memristor arrays. Regulated passivation-corrosion-enabled logic and memory in fibres offers a promising avenue for the next-generation textile computing.
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Relevant data supporting this study are available within the article and the Supplementary Information file. All the numerical data generated in this study are provided in the Supplementary Information/Source Data file in the form of an Excel file with pages corresponding to each presented graph. All data, including images, are available from the corresponding author upon request. Source data are provided with this paper.
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Acknowledgements
This research was funded in whole or in part by the Swiss National Science Foundation (SNSF) grant no. 219231. We acknowledge the discussion with the BHMT group members. The authors gratefully acknowledge the ETH Zurich ScopeM centre for their support and assistance in this work. The authors gratefully acknowledge Dr. Roman Heuberger of the RMS Foundation company for his support and assistance in this work.
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W.Y., Y.L., and C.M. conceived the project and designed the experiments. W.Y. and Y.L. fabricated the samples and devices, ran the experiments, analyzed the data, and wrote the initial draft of the manuscript. M.R.C. designed and implemented a standalone circuit and PCB enabling programmable read/write operations on textile memristor arrays. W.Y., Y.L., and A.S. performed the initial conceptualisation and analysis on the electrochemical part. W.Y., A.S., and C.M. reviewed the manuscript. W.Y. and C.M. supervised the project.
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Li, Y., Yang, W., Shokurov, A.V. et al. In-fibre logic and memory via tuneable passivation–corrosion. Nat Commun (2026). https://doi.org/10.1038/s41467-026-71249-7
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DOI: https://doi.org/10.1038/s41467-026-71249-7
