Abstract
In-memory computing using two-terminal memristors offers a promising route to reduce the energy demands of data-intensive computing. However, current devices scale poorly due to sneak currents and materials that are incompatible with standard complementary metal-oxide-semiconductor and very large-scale integration processes. Here we demonstrate a self-rectifying memristor that unifies resistive switching and diode-like rectification in a single device, a hybrid ferroelectric-ionic tunnel diode fabricated using complementary metal-oxide-semiconductor compatible materials and processes. We harness the collective (ferroelectric-antiferroelectric polymorphism) and defective (ionic) switching behaviors of HfO2 − ZrO2 to synergistically enhance both its electroresistance and rectifying behavior. Furthermore, conformal atomic layer deposition enables the integration of three-dimensional device structures, yielding high on/off (9.3 × 107) and rectifying (1.7 × 106) ratios with a storage capacity of 10 Gb. These results highlight the potential of this device as a hardware building block for scalable in-memory computing platforms.
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Acknowledgements
This work was supported by Institute of Information & communications Technology Planning & Evaluation (IITP) grant funded by the Korea government (MSIT) (RS-2024-00399394, Development of PDK and process integration platform for new memory–CMOS co-integrated PIM system; D.Kwon); in part by the National Research Foundation of Korea (NRF) grant funded by the Korea Government Ministry of Science and ICT (MSIT) under Grant RS-2023-00260527 (D.Kwon).
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Kim, JH., Shin, W., Koo, RH. et al. Hybrid ferroelectric-ionic memristive hardware for high scalability in-memory computing. Nat Commun (2026). https://doi.org/10.1038/s41467-026-72103-6
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DOI: https://doi.org/10.1038/s41467-026-72103-6
