Fig. 2: Band structures and photoabsorption of InSe/Sb heterostructures with different interlayer twist angles. | npj Computational Materials

Fig. 2: Band structures and photoabsorption of InSe/Sb heterostructures with different interlayer twist angles.

From: The interlayer twist effectively regulates interlayer excitons in InSe/Sb van der Waals heterostructure

Fig. 2

a–g Projection-resolved band structures for the InSe/Sb heterostructures with different interlayer twist angles. The red and blue dots represent as the contributions of Sb and InSe sublayers, respectively. The inserted value is the band gap. Fermi level is set to 0 eV. h the average binding energy per atom of InSe/Sb heterostructures with different interlayer twist angle and other corresponding heterostructures. i Photoabsorption of the isolated InSe and Sb layers, and InSe/Sb heterostructures with different twist angles. The absorption spectrum in light green area refers to the interlayer photoexcitation. j The square of the transition dipole moment between valence and conduct band edges for the isolated InSe and Sb monolayers, and InSe/Sb heterostructures with different twist angles.

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