Table 1 DFT calculations of the structural, magnetic, and electronic properties for the 25 identified 2D layered ABCh3 compounds

From: High-throughput screening to identify two-dimensional layered phase-change chalcogenides for embedded memory applications

Stacking

Composition

a (Å)

b (Å)

c (Å)

α (°)

β (°)

γ (°)

Magnetism

Band gap (eV)

Rhombohedral (ABC stacking)

CdPS3

7.46

7.46

7.46

49.5

49.5

49.5

NM

1.76

SnPS3

7.50

7.50

7.50

52.3

52.3

52.3

NM

0.88

CdPSe3

7.77

7.77

7.77

50.0

50.0

50.0

NM

1.13

MgPSe3

7.71

7.71

7.71

49.0

49.0

49.0

NM

2.01

FePSe3

7.45

7.45

7.45

49.3

49.3

49.3

AFM

0.28

MnPSe3

7.60

7.60

7.60

49.3

49.3

49.3

AFM

0.87

BiSiTe3

8.40

8.40

8.40

51.7

51.7

51.7

NM

0.68

InGeTe3

8.30

8.30

8.30

51.4

51.4

51.4

NM

0.38

ScSiTe3

8.22

8.22

8.22

50.6

50.6

50.6

NM

0.55

CrGeTe3

7.89

7.89

7.89

51.7

51.7

51.7

FM

0.33

CrSiTe3

7.90

7.90

7.90

51.0

51.0

51.0

FM

0.47

Hexagonal (AA stacking)

AlSiTe3

6.88

6.88

7.17

90

90

120

NM

1.09

InSiTe3

7.13

7.13

7.20

90

90

120

NM

0.42

Monoclinic (AA* stacking)

CdPS3

6.25

10.81

6.93

90

107.7

90

NM

1.93

MgPS3

6.07

10.52

6.86

90

107.1

90

NM

2.75

SnPS3

6.39

12.11

6.95

90

108.6

90

NM

1.49

ZnPS3

5.97

10.34

6.78

90

107.1

90

NM

2.01

PdPS3

5.97

10.35

6.65

90

107.5

90

NM

0.00

CoPS3

5.75

9.95

6.40

90

107.6

90

AFM

0.06

FePS3

5.86

10.33

6.69

90

107.4

90

AFM

0.39

MnPS3

6.02

10.42

6.75

90

107.1

90

AFM

1.24

NiPS3

5.79

10.03

6.58

90

106.8

90

AFM

0.55

VPS3

5.83

10.10

6.66

90

106.9

90

AFM

0.86

CrPSe3

6.35

10.90

6.69

90

108.5

90

FM

0.00

NiPSe3

6.12

10.63

6.78

90

106.2

90

AFM

0.35