Fig. 5: Phonon-limited mobility at 300 K.
From: Phonon-limited mobility for electrons and holes in highly-strained silicon
Phonon-limited mobilities as a function of the longitudinal strain in the transverse (green for the electrons and orange for the holes) and longitudinal (blue for the electrons and red for the holes) directions of the applied stress in the [100] crystal direction. The experimental data (white dots) have been obtained by scaling and offsetting the resistance variations obtained experimentally by the zero-strain mobility, i.e., 1366 cm2V−1s−1. The experimental linear model using the piezoresistive coefficients from Smith60 is indicated with the dashed black lines while the computation of the electron mobilities from Ma et al.69 and Ungersboeck et al.35 are represented by dotted and dash-dotted lines.
