Table 1 Piezoresistive coefficients for the holes (p-Si) and electrons (n-Si) of silicon determined experimentally (exp.) or theoretically (th.) in TPa−1
From: Phonon-limited mobility for electrons and holes in highly-strained silicon
n-Si | p-Si | Doping | |||
|---|---|---|---|---|---|
π11 | π12 | π11 | π12 | (cm−3) | |
Smith60 (exp.) | −1022 | 534 | 66 | −11 | 5 × 1014 |
Matsuda et al.64 (exp.) | −840 | 430 | — | — | 4 × 1016 |
Tufte and Stelzer55 (exp.) | −1077 | — | — | — | 5 × 1016 |
Cho et al.86 (exp.) | −691 | 390 | 29 | −6 | 1018 |
This work (exp.) | −632 | 403 | — | — | 5 × 1017 |
Matsuda et al.64 (th.) | −970 | 480 | — | — | undoped |
Dorey and Maddern87 (th.) | — | — | 213 | −108 | undoped |
This work (th.) | −989 | 502 | 148 | −72 | undoped |
