Fig. 1: Structure of neutral divacancy (VSi \({{\rm{V}}}_{\,\text{C}\,}^{0}\) or VV0) defects in 4H-SiC. | npj Computational Materials

Fig. 1: Structure of neutral divacancy (VSi \({{\rm{V}}}_{\,\text{C}\,}^{0}\) or VV0) defects in 4H-SiC.

From: Theory of the divacancy in 4H-SiC: impact of Jahn-Teller effect on optical properties

Fig. 1: Structure of neutral divacancy (VSi $${{\rm{V}}}_{\,\text{C}\,}^{0}$$ V C 0 or VV0) defects in 4H-SiC.

Ball and stick representation of vacancy pairs depicted as hollow spheres. The carbon and silicon atoms are represented by brown and blue spheres, respectively. Four nonequivalent configurations (hh, kk, hk, kh) of divacancy defects are shown. The planes labeled h and k indicate the symmetry of lattice sites.

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