Fig. 7: Key etching processes identified from NNP-MD simulations. | npj Computational Materials

Fig. 7: Key etching processes identified from NNP-MD simulations.

From: Neural network-driven molecular insights into alkaline wet etching of GaN: toward atomistic precision in nanostructure fabrication

Fig. 7

a Adsorption of OH− leading to Ga-N bond breaking, b Ga dissolution, c N dissolution with and d without the formation of Ga-O-Ga bridges, and e Ga-N bond breaking facilitated by proton transfer from -NH2 species. In a–e, reaction products and adsorbates are highlighted in blue. VGa denotes a Ga vacancy.

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