Table 1 Energy differences from the reference basis-set extrapolated QP energies \({E}_{QP\,\text{-}\,\infty }^{NC}\) and impact of the corrections

From: Automated workflow for accurate high-throughput GW calculations using plane waves

  

\({E}_{QP\,\text{-}\,\infty }^{NC}-{E}_{QP}^{US}({N}_{pw}^{(1)})\)

\({E}_{QP\,\text{-}\,\infty }^{NC}-[{E}_{QP}^{US}({N}_{pw}^{(1)})\,\text{+}\,\Delta BS]\)

\({E}_{QP\,\text{-}\,\infty }^{NC}-[{E}_{QP}^{US}({N}_{pw}^{(1)})\,\text{+}\Delta BS\text{+}\,\Delta NV]\)

Systems

\({N}_{pw}^{(1)}\)

VBM (meV)

CBM (meV)

VBM (meV)

CBM (meV)

VBM (meV)

CBM (meV)

AlAs

910

−164

−173

−119

−115

1

−2

AlP

820

−77

−88

−18

−19

−14

−7

AlSb

1110

−123

−128

−64

−57

1

−2

CdO

580

−179

−28

−113

−22

−6

2

CdS

860

−95

−97

20

−47

−3

1

CdSe

1300

−325

−189

−258

−176

−43

−21

CdTe

1150

−231

−135

−105

−66

5

8

GaAs

910

−204

−221

−163

−171

2

5

GaP

760

−103

−134

−36

−58

35

3

GaN

960

−212

−199

−26

−80

50

−20

InP

860

−138

−118

−37

−102

−4

−2

InSb

1150

−166

−100

−78

−47

1

6

MgO

430

−361

−274

−169

−165

−26

−16

SiC

600

−96

−86

−12

−32

−9

−11

ZnS

760

−269

−97

−125

−36

4

−1

ZnSe

1100

−328

−180

−268

−174

5

7

ZnTe

1060

−302

−93

−191

−23

21

9

MAE

 

198

138

106

82

14

7

σ

 

91

61

82

58

16

6

  1. The table illustrates how the ΔBS and ΔNV corrections effectively approximate the reference quasi-particle energies for a group of 19 typical semiconductors and insulators. The third and fourth columns list the deviations from the reference for \({E}_{QP}^{US}({N}_{pw}^{(1)},{N}_{k})\) at the VBM and CBM Γ k−point, as determined in the dense branch of the workflow in Fig. 2. The inclusion of ΔBS lowers the differences by ~ 40% on average, while the combined corrections reduce them by more than 90%. The bold values highlight the aggregate measures—MAE and standard deviation—that summarize performance over the entire dataset.