Fig. 5: DeePTB-NEGF-Poisson SCF simulation for carbon nanotube field-effect transistor with local bottom gate (LBG). | npj Computational Materials

Fig. 5: DeePTB-NEGF-Poisson SCF simulation for carbon nanotube field-effect transistor with local bottom gate (LBG).

From: Deep learning accelerated quantum transport simulations in nanoelectronics: from break junctions to field-effect transistors

Fig. 5

a Transfer characteristics at drain-source bias Vds = 0.4 V and dope concentrations as 8.89 × 108 m−1 for LBG CNT-FETs using different CNT diameters. The channel length Lch for all FETs is 9 nm. Inset: Schematic of the transistor geometry, where Lch denotes channel length. b, c Transfer characteristics at drain-source bias Vds = 0.4 V and dope concentrations as 8.89 × 108 m−1 for LBG CNT-FETs with channel length Lch as 18 nm and 41 nm. d–f Position-resolved local density of states for CNT(17, 0) along the transport direction (Z axis) with gate voltage Vgs = −0.8, −0.4 and 0. 0 V. The left and right electrodes are the drain and source, respectively. The red dashed lines indicate the Fermi level for source and drain. The orange dashed line in Vgs = 0.0 V case indicates the top of the valence band, inducing a barrier ΦB = 0.19 eV for holes.

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