Fig. 2: Device characteristics depending on NS thickness, scattering rate, and doping profile.
From: Quantum transport through a constriction in nanosheet gate-all-around transistors
a Effect of E-P scattering on the drain current. Dumbbell-shaped devices show the unusual result that the closer to ballistic, the more severe the carrier reflection, resulting in a decrease in on-current; uniform-shaped devices show a monotonic decrease in on-current with increasing scattering rate, as expected. b On-current of the dumbbell-shaped and uniform-shaped devices according to constriction doping density. We changed the doping density by adjusting the doping junction depth as shown in Supplementary Fig. 1b. The (c) uniform-shaped (d) dumbbell-shaped devices with high constriction doping density have almost the same on-current. However, as the constriction doping decreases, the carrier reflection become severe and the on-current of the dumbbell-shaped device decreases rapidly.
