Table 1 Select sub-THz transceivers in the D-band from recent years
From: Sub-THz communication systems: pushing the capabilities of silicon
Ref/Year | Center Freq. (GHz) | Output Power (dBm) | Rx NF (dB) | Rx Gain (dB) | Die Area (mm2) | Process Node | Modulation Type | Data Rate (Gbps) | Efficiency (pJ/bit) (Tx/Rx) | Dist. (m) |
|---|---|---|---|---|---|---|---|---|---|---|
113 / 2020 | 113 | ‒2 | 11 | 44 | 4.72 | 28nm CMOS | 16QAM | 80 | 5.8/6.2 | 0.1 |
63 / 2024 | 120 | 2 | ‒ | ‒ | 12.6 | 45nm SOI | 64QAM | 120 | 7.3/− | 0.03 |
114 / 2022 | 122 | ‒5 | ‒ | 32 | 8.25 | 16nm FinFET | 16QAM | 120 | 4.87/4.43 | 3(1) |
115 / 2019 | 125 | ‒ | 10.3 | 32 | 8.75 | 55nm SiGe | 8PSK | 36 | −/5.56 | 0.3 |
49 / 2024 | 130 | 18 | ‒ | ‒ | 0.69 | 28nm CMOS | OOK | 16 | 46.9/− | 1 |
47 / 2017 | 130 | 9.5 | ‒ | ‒ | 3.2 | 55nm SiGe | OOK | 12.5 | 7.76/− | 5 |
116 / 2021 | 134 | ‒5 | 9 | 15 | 16 | 22nm FinFET | 16QAM | 56 | 8.8 | 3(1) |
41 / 2024 | 135 | 0 | 6 | 25 | 2.29/ 3.62 | 28nm CMOS | 16QAM | 36 | 3.6/4.4 | 0.02 |
117 / 2024 | 135 | 0 | 14 | ‒ | 3.59/ 2.67 | 28nm CMOS | PAM4 | 100 | 3.44/2.3 | 3(1) |
62 / 2018 | 136 | 11.35 | ‒ | ‒ | 4.2 | 45nm SOI | QPSK(3) | 12 | 104.6/− | 0.152 |
118 / 2024 | 138 | ‒ | 7 | 20 | 8.58 | 45nm SOI | 16QAM | 112.7 | −/6.3 | 2.5 |
119 / 2023 | 140 | ‒ | 12.4 | 15 | 0.7 | 22nm FinFET | 16QAM | 160 | −/1.04 | 0 |
11 / 2024 | 140 | ‒3 | 45.2 | 20 | 0.689 | 45nm SOI | 64QAM | 24 | 453/280 | 0.3 |
61 / 2022 | 140 | ‒3.8 | ‒ | ‒ | 4 | 22nm FinFET | 16QAM | 160 | 1/− | 0 |
120 / 2023 | 140 | ‒8 | 10.1 | 22 | 27.2 | 130nm SiGe | 32QAM | 200 | 12.5/9.75 | 0.15 |
121 / 2023 | 141 | 13 | 7.1 | 24 | 5.83 | 28nm CMOS | 16QAM | 48 | 16.9/18.3 | 0 |
122 / 2024 | 142 | 13 | 12 | 20 | 6.17/ 4.33 | 65nm CMOS | 32QAM(3) | 200 | 5.75/2.75 | 0.32 |
123 / 2020 | 142.5 | 13 | 7.5 | 65 | 11.7 | 130nm SiGe | 64QAM(3) | 36 | 95.8/63.9 | 0(2) |
13 / 2025 | 144 | 12 | 6.3 | 42 | 29.71 | 28nm CMOS | 64QAM(3) | 30 | 122.7/24.5 | 0.5 |
124 / 2021 | 147 | ‒ | 6.4 | 27.5 | 25.38 | 45nm SOI | 16QAM(3) | 10 | −/116 | 0.35 |
125 / 2022 | 147 | 12 | 7.5 | 30 | 3.91/ 3.91 | 130nm SiGe | 64QAM(3) | 30 | 8.8/6.7 | 0(2) |
126 / 2022 | 148 | ‒1.7 | ‒ | ‒ | 4.8 | 45nm SOI | 64QAM | 84 | 7.1/− | 0.05 |
127 / 2020 | 149 | 0.1 | ‒ | ‒ | ‒ | 45nm SOI | 64QAM | 84 | 4.97/− | ‒ |
128 / 2023 | 149 | ‒8.6 | ‒ | ‒ | 7 | 45nm SOI | 16QAM | 57.6 | 27.4/− | 1 |
46 / 2022 | 150 | 2.9 | ‒ | ‒ | 4.41 | 45nm SOI | OOK | 0.01 | 1160/1000 | 0.7 |
129 / 2024 | 153.5 | ‒ | 7.5 | 28.5 | 0.73 | 65nm CMOS | ‒ | ‒ | ‒ | 0 |
52 / 2023 | 165 | ‒8 | 15 | 20 | 1.32/ 3 | 65nm CMOS | 4FSK | 17 | 3.65/7.06 | 0.18 |
55 / 2019 | 170 | ‒3.3 | ‒ | ‒ | 7.8 | 65nm CMOS | 8PSK | 15 | 37.3/− | 0.1 |
