Table 2 Select sub-THz Transceivers above the D-band from Recent Years

From: Sub-THz communication systems: pushing the capabilities of silicon

Ref/Year

Center freq. (GHz)

Output power (dBm)

Rx NF (dB)

Rx gain (dB)

Die area (mm2)

Process Node

Modulation Type

Data rate (Gbps)

Efficiency (pJ/bit) (Tx/Rx)

Dist. (m)

54 / 2023

196

‒0.46

‒

‒

0.52

55nm SiGe

BPSK

20

1.25/−

0.1

51 / 2023

196

‒3

‒

‒

0.68

55nm SiGe

BFSK

10

23/-

0.01

44 / 2017

217

4.8

‒

‒

2.8

130nm SiGe

OOK(2)

24.4

36.9/−

0.1

74 / 2023

220

8.5

9

48

1.82/ 1.53

130nm SiGe

16QAM(2)

11.2

57.1/44.2

0.2

130 / 2024

220

2.95

‒

‒

‒

130nm SiGe

16QAM

18

284.4/-

1

27 / 2021

225

‒3

‒

‒

0.89

55nm SiGe

OOK

20

8.26/-

0.015

131 / 2022

227.5

7

17.5

7.5

4.23/ 4.07

130nm SiGe

16QAM

100

26

0.6

132 / 2019

237.5

5

14

8

‒

130nm SiGe

16QAM

95

5.5

1

133 / 2020

240

12

15.5

41

7/ 5.1

130nm SiGe

16QAM

100

8.5/12.4

0.8

134 / 2018

240

‒0.8

13.4

32

4.48/ 4.16

130nm SiGe

BPSK

25

15/23

0.15

56 / 2020

240

7.5

18

18

4.02/ 3.36

130nm SiGe

QPSK

80

12

2

135 / 2023

246

3.5

‒

‒

1.16

130nm SiGe

BPSK

52

8/-

0

60 / 2024

251

‒8

‒

‒

2.47

65nm CMOS

16QAM(2)

108

1.9/−

0.5

136 / 2022

256

‒16

19

‒20

4.17

65nm CMOS

QPSK

52

14.4/14.4

0.025

75 / 2021

261

‒13

‒

‒

4.17

65nm CMOS

QPSK(2)

36

20.8/20.8

0.025

57 / 2019

266

‒1.6

22.9

5

11.06

40nm CMOS

16QAM

80

11.1/11.2

0.03

76 / 2022

266

‒

17.4

26

4.55

40nm CMOS

16QAM

76

−/6.18

0.06

84 / 2021

270

‒24

‒

‒

9.36/ 0.81

130nm SiGe

OOK

35 × 3

2.4/2.1

0.3(1)

137 / 2023

280

‒

18.2

25

1.12

130nm SiGe

‒

‒

‒

0

138 / 2020

291

‒12

‒

6

1.9/ 1.9

65nm CMOS

16QAM

34

7.9/4.1

0.01

73 / 2023

297

‒

20

18

0.72

28nm CMOS

‒

‒

‒

0

102 / 2022

310

‒24.8

36

24

5.46

65nm CMOS

OAM

0.001

154000/166000

1

53 / 2022

390

‒

‒

‒

0.18

90nm SiGe

OOK

3

23.3/−

2

139 / 2020

390

‒5.4

‒

‒

0.39

28nm CMOS

BPOOK

28

3.8/−

0

58 / 2020

390

‒16

‒

‒

‒

28nm CMOS

16QAM

6

183.3/−

0

140 / 2023

398

‒9.4

25

17.3

0.19/ 0.54

90nm SiGe

OOK

5

16/36.8

0.05

141 / 2018

410

‒14.6

‒

‒

‒

28nm CMOS

OOK

5

24/−

0.13

  1. (1) Dielectric waveguide used instead of over-the-air. (2) Highest data rate modulation, but not highest performed modulation.