Fig. 2: Linear and nonlinear eigenmode field distribution with power P. | npj Nanophotonics

Fig. 2: Linear and nonlinear eigenmode field distribution with power P.

From: Ultrahigh free-electron Kerr nonlinearity in all-semiconductor waveguides for all-optical nonlinear modulation of mid-infrared light

Fig. 2

a Simulated linear TM eigenmode electric field amplitude distribution (not normalized) for n0 = 6 × 1018 cm−3 (LBP mode) at λ0 = 8 μm and a power P = 0 W. The white dashed lines mark the waveguide boundaries and the gray shadowing indicates the HfO2 and Au layers on top of the waveguide. b Simulated nonlinear TM eigenmode electric field amplitude distribution (not normalized) for n0 = 6 × 1018 cm−3 (LBP mode) at λ0 = 8 μm and a power P = 0.144 W. The white dashed lines mark the waveguide boundaries and the gray shadowing indicates the HfO2 and Au layers on top of the waveguide. c Linear and nonlinear eigenmode electric field amplitude profiles (not normalized) along the center of the waveguide. d Zoomed-in views of the linear and nonlinear eigenmode electric field amplitude profiles (not normalized) in the heavily doped InGaAs layer. The mode at P = 0.144 W shows an appreciable field amplitude increase. e Zoomed-in views of the linear and nonlinear eigenmode electric field amplitude profiles (not normalized) in the undoped InGaAs region. The mode at P = 0.144 W shows an appreciable field decrease, associated with a lower mode effective refractive index.

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