Search

Strong nonlinear optical response of most thin layered materials is often narrowband, especially in the mid-infrared spectral range. Here, authors experimentally observe second harmonic generation in the range of 1.2-5.0 μm from Weyl semiconductor tellurium nanoflakes. The generation efficiency is shown to be two orders of magnitude larger than that of GaSe.

Xiong et al. report a floating gate photoelectric array based on MoS₂ channel layer. By regulating the tunnelling efficiency of electric field-assisted photogenerated carrier, it simulates the cross-modal correlation plasticity observed in the primary cortex of brain, enabling visual perception hardware for secure image coding.

The realization and control many-body quantum states in perovskites would extend their application to ultrafast quantum operation. Here, the authors generate a cooperative quantum state of excitons in a lead halide perovskite quantum dot ensemble and control the ultrafast radiation through optical microcavites.

Molybdenum disulfide vertical transistors with channel lengths down to one atomic layer can be made with metal electrodes using a mechanical van der Waals transfer process that leads to a high-quality metal–semiconductor interface.

The interplay of correlated fermionic and bosonic states in transition metal dichalcogenide heterostructures has not been fully explored. Here the authors propose a twisted WSe₂/WS₂/WSe₂ trilayer as a platform to study hybrid correlated states and demonstrate a novel trion state with charge-layer-locked structure.

In two-dimensional semiconductors, light can generate spin polarisations, however this effect is typically limited to low temperatures. By combining Lead Iodide (PbI₂) with transition metal dichalcogenides (TMDCs), the authors demonstrate room temperature light induced near-unity spin polarisations.

2D high-κ dielectric materials remain highly sought-after for the future development of 2D electronics. Here, the authors report a 2D edge-seeded heteroepitaxial growth strategy to synthesize CaNb₂O₆ thin films with equivalent oxide thickness down to 0.7 nm and show their application for high-performance 2D MoS₂ transistors.

The bulk photovoltaic effect (BPVE) has potential for the realization of high conversion efficiency optoelectronic devices. Here, the authors show that combined in-plane and out-of-plane charge polarizations in MoS₂/black phosphorus heterostructures can enhance the BPVE and reduce the extrinsic response times down to 2.2 ns.

Growth of large area and defect-free two-dimensional semiconductor layers for high-performance p–n junction applications has been a great challenge. Yang et al. prepare millimeter-scaled WSe₂/SnS₂ vertical heterojunctions by two-step van der Waals epitaxy, which show excellent optoelectronic properties.

Subcentimetre-size black phosphorous and its alloy films have been achieved on conventional substrates through sustained feedstock release design, and exhibit high crystalline quality and composition-dependent bandgap tunability.

A van der Waals heterostructure that has a partial floating-gate field-effect transistor device architecture can function as both reconfigurable transistor and reconfigurable non-volatile memory, and can provide reconfigurable logic-in-memory capabilities.

Strong nonlinearities in 2D materials can lead to interesting applications in optoelectronics. Here the authors investigate the optical nonlinearity of palladium diselenide, determine the layer dependent two photon absorption efficiency and the saturable absorption modulation depth.

Direct synthesis of large area crystalline black phosphorus films is still challenging. Here, the authors report growth of high-quality black phosphorus films on insulating silicon substrates through a gas-phase epitaxial growth strategy with field-effect and Hall mobilities of over 1200 and 1400 cm2 /Vs at room temperature, respectively and a current on/off ratio of up to 10⁶, comparable to the exfoliated flakes.

Different two-dimensional materials can be grown epitaxially side by side to create one-layer-thick p–n junctions.

The moiré intralayer excitons in the twisted WSe₂/WSe₂ homobilayers superlattices were successfully observed and confirmed the existence of moiré intralayer excitons.

Mixed-halide perovskites are of interest for photovoltaic devices, but light-induced halide segregation obstructs bandgap tuning and is not fully understood. Here the authors study the effects of strain and iodide/bromide ratio on light-induced halide segregation in mixed-halide perovskites.

Attaining high selectivity for CO₂ electroreduction in acid is usually difficult due to competing hydrogen evolution. Here, the authors demonstrate efficient CO₂ reduction to multicarbon products in strongly acidic medium (pH ≤ 1) on a porous Cu catalyst by combining confinement and cation effects.

Interlayer exciton dynamics in a van der Waals heterostructure is found to be modulated by the twist angle between the atomically thin layers, elucidating the effect of moiré potentials on exciton motion and providing guidelines to design quantum photonics devices based on 2D materials.

Photovoltaic devices based on 2D materials still suffer from low quantum efficiencies due to interfacial charge recombination and inefficient contacts. Here, the authors design photovoltaic detectors and photodiodes based on MoS₂ and doped AsP heterojunction with unilateral depletion region reporting high external quantum efficiency of 71% under zero applied bias.

Lead-halide perovskite are an interesting material platform for light-emitting devices but the underlying lasing mechanism is still disputed. Here, Schlaus et al. use time-resolved spectroscopy of CsPbBr₃ nanowires to show that lasing results from stimulated emission of an electron-hole plasma.

Ultra-high brightness green Micro-LEDs with 5 μm pixels were achieved using uniform GaN-on-Si epilayers, exceeding 10⁷ cd/m² brightness and enabling high-resolution Micro-LED displays with CMOS circuit integration.

Localized moiré excitons were found in twisted heterotrilayer superlattices, with the moiré potential depth tunable through layer degrees of freedom. This discovery benefits quantum light emitter development.

Energy-efficient artificial photonic synapse is designed based on photo-sensitive BP/CdS heterostructure device, which can be used for high-performance brain-inspired neuromorphic computing.

A polarization-multiplexed metasurface-enabled diffractive neural network, which is integrated with a CMOS imaging sensor, demonstrates on-chip multi-channel sensing and multitasking in the visible.

The three core problems of CQD laser research and the corresponding solutions for achieving high-temperature CQD lasers.