Exchange bias, where an adjacent antiferromagnet leads to an offset magnetization loop in a ferromagnet is a critical effect in magnetic memory devices. Here, Pellet-Mary et al introduce a “lateral exchange bias”, allowing control of the Neel vector in bilayer samples of CrSBr via laterally adjacent odd layered segments.
- Clément Pellet-Mary
- Debarghya Dutta
- Patrick Maletinsky
