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Showing 1–8 of 8 results
Advanced filters: Author: Duk-hyun Choe Clear advanced filters

  • Ultralow-power ferroelectric field-effect transistors are used to achieve low-power NAND flash memory, overcoming the trade-off between multi-level capability and power efficiency and paving the way for next-generation storage memory.

    • Sijung Yoo
    • Taek Jung Kim
    • Duk-Hyun Choe
    Research
    Nature
    Volume: 648, P: 320-326

  • Bayesian neural networks is a machine learning architecture designed to capture the uncertainties of the predictions better. Here, the authors developed a 3D ferroelectric NAND-based Bayesian neural network system for enhanced efficiency and robustness.

    • Minsuk Song
    • Ryun-Han Koo
    • Daewoong Kwon
    ResearchOpen Access
    Nature Communications
    Volume: 16, P: 1-14

  • Monoclinic transition metal dichalcogenides offer the possibility of topological quantum devices, but they are difficult to realize. One route may be through switching from the common hexagonal phase, for which a method is now shown.

    • Dong Hoon Keum
    • Suyeon Cho
    • Young Hee Lee
    Research
    Nature Physics
    Volume: 11, P: 482-486

  • Ferroelectric zirconium-doped hafnia (Hf0.5Zr0.5O2) can be used to create negative differential capacitance behaviour in capacitors and transistor gate stacks, providing reliable enhancements in switching performance.

    • Sanghyun Jo
    • Hyangsook Lee
    • Jinseong Heo
    Research
    Nature Electronics
    Volume: 6, P: 390-397

  • During carrier multiplication, high-energy free carriers in a given material relax by generation of additional electron-hole pairs. Here, the authors report evidence of carrier multiplication in multilayer MoTe2 and WSe2 films with up to 99% conversation efficiency.

    • Ji-Hee Kim
    • Matthew R. Bergren
    • Young Hee Lee
    ResearchOpen Access
    Nature Communications
    Volume: 10, P: 1-9

  • We report the discovery of novel metastable boron allotropes, called hex-Bν, using the crystal structure search method. First-principles calculations reveal that hex-Bν shows not only dynamical, mechanical stability but also structural flexibility under high pressures and high temperatures. We suggest a new pressure-induced transition pathway from α-B12 to γ-B28 under extreme conditions, in which our discovered allotropes can act as intermediate phases. This work provides a possible solution to the long-standing fundamental question on the phase transition mechanism between boron allotropes.

    • Woo Hyun Han
    • Young Jun Oh
    • Kee Joo Chang
    ResearchOpen Access
    NPG Asia Materials
    Volume: 9, P: e400