Developing room-temperature magnetic semiconductors with robust, non-volatile electrical control remains a key challenge for energy-efficient spintronics. Here, first-principles calculations suggest that Ni-intercalated Cr2NiSe4, derived from bilayer CrSe2, is a 2D bipolar magnetic semiconductor with a Curie temperature of 495 K, in which ferroelectric switching in Al2Se3-based heterostructures enables non-volatile control of carrier spin polarization and room-temperature device operation.
