Improving the performance of 2D transistors is essential to enable their future application for beyond-silicon electronics. Here, the authors report a method to induce localized tensile strain in monolayer MoS2 transistors, leading to enhanced electron mobilities up to 185 cm2/Vs and an 8-fold increase of the on-state current densities.
- Xia Liu
- Berke Erbas
- Juergen Brugger
