Nature Search

Probing the limits of gate-based charge sensing

Reading out the state of quantum bits is an essential requirement that any quantum computer implementation must satisfy. Gonzalez-Zalba et al. now show that in situresonant gate-based detection can be a more sensitive approach than external electrometers while reducing the qubit architecture’s complexity.

M. F. Gonzalez-Zalba
S. Barraud
A. C. Betz
Research20 Jan 2015
Nature Communications

Volume: 6, P: 1-8
Compact quantum dot models for analog microwave co-simulation

Lorenzo Peri
Alberto Gomez-Saiz
M. Fernando Gonzalez-Zalba
ResearchOpen Access13 Dec 2025
npj Quantum Information

Volume: 11, P: 1-12
Rapid cryogenic characterization of 1,024 integrated silicon quantum dot devices

The integration of 1,024 independent silicon quantum dot devices with on-chip digital and analogue electronics, all of which operate below 1 K, allows characteristic data across the quantum dot array to be acquired and analysed in under 10 min.

Edward J. Thomas
Virginia N. Ciriano-Tejel
John J. L. Morton
ResearchOpen Access03 Jan 2025
Nature Electronics

Volume: 8, P: 75-83
Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon

Gate-reflectometry is a recently demonstrated measurement technique for single spin states in silicon. It is potentially able to perform quantum non-demolition measurements and uses compact circuitry that can be scaled up to larger quantum computers. Crippa et al. successfully combine gate-reflectometry qubit readout and coherent control.

A. Crippa
R. Ezzouch
S. De Franceschi
ResearchOpen Access03 Jul 2019
Nature Communications

Volume: 10, P: 1-6
Hybrid optical–electrical detection of donor electron spins with bound excitons in silicon

A scheme of hybrid optical–electrical detection of an ensemble of donor electrons bound to phosphorus in silicon reveals electron spin Rabi oscillations and long coherence times, setting the foundations for a single-electron spin read-out technique.

C. C. Lo
M. Urdampilleta
J. J. L. Morton
Research23 Mar 2015
Nature Materials

Volume: 14, P: 490-494
A CMOS dynamic random access architecture for radio-frequency readout of quantum devices

A readout scheme for quantum devices, which is inspired by one-transistor–one-capacitor dynamic random access memory and consists of CMOS field-effect transistors and quantum dots, could reduce the number of input lines per qubit and allow large-scale device arrays to be addressed.

Simon Schaal
Alessandro Rossi
M. Fernando Gonzalez-Zalba
Research17 Jun 2019
Nature Electronics

Volume: 2, P: 236-242
Electrical readout of spins in the absence of spin blockade

Felix-Ekkehard von Horstig
Lorenzo Peri
M. Fernando Gonzalez-Zalba
ResearchOpen Access02 Oct 2025
npj Quantum Information

Volume: 11, P: 1-8
Gate-based single-shot readout of spins in silicon

Instead of using capacitively coupled charge sensors, which imply additional complexity in the device architecture, radiofrequency reflectometry on the gate defining the quantum dot can read out the spin state of a double quantum dot in a single shot.

Anderson West
Bas Hensen
Andrew S. Dzurak
Research11 Mar 2019
Nature Nanotechnology

Volume: 14, P: 437-441
Compilation and scaling strategies for a silicon quantum processor with sparse two-dimensional connectivity

O. Crawford
J. R. Cruise
M. F. Gonzalez-Zalba
ResearchOpen Access22 Feb 2023
npj Quantum Information

Volume: 9, P: 1-11
CMOS-based cryogenic control of silicon quantum circuits

A cryogenic CMOS control chip operating at 3 K is used to demonstrate coherent control and simple algorithms on silicon qubits operating at 20 mK.

Xiao Xue
Bishnu Patra
Lieven M. K. Vandersypen
Research12 May 2021
Nature

Volume: 593, P: 205-210
Unified linear response theory of quantum electronic circuits

L. Peri
M. Benito
M. F. Gonzalez-Zalba
ResearchOpen Access09 Nov 2024
npj Quantum Information

Volume: 10, P: 1-14
4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot

Sinan Bugu
Shimpei Nishiyama
Tetsuo Kodera
ResearchOpen Access08 Oct 2021
Scientific Reports

Volume: 11, P: 1-8
Non-symmetric Pauli spin blockade in a silicon double quantum dot

Theodor Lundberg
David J. Ibberson
M. Fernando Gonzalez-Zalba
ResearchOpen Access06 Mar 2024
npj Quantum Information

Volume: 10, P: 1-12
Pipeline quantum processor architecture for silicon spin qubits

S. M. Patomäki
M. F. Gonzalez-Zalba
J. J. L. Morton
ResearchOpen Access12 Mar 2024
npj Quantum Information

Volume: 10, P: 1-10
Scaling silicon-based quantum computing using CMOS technology

This Review examines the scaling prospects of quantum computing systems based on silicon spin technology and how the different layers of such a computer could benefit from using complementary metal–oxide–semiconductor (CMOS) technology.

M. F. Gonzalez-Zalba
S. de Franceschi
A. S. Dzurak
Reviews20 Dec 2021
Nature Electronics

Volume: 4, P: 872-884
Primary thermometry of a single reservoir using cyclic electron tunneling to a quantum dot

Local temperature measurements are important in the study of quantum thermodynamics at the nanoscale. The authors report a sensor based on cyclic electron tunnelling between a quantum dot and single-electron reservoir which can be used to provide local and precise temperature measurements in nanoelectronic devices.

Imtiaz Ahmed
Anasua Chatterjee
M. Fernando Gonzalez-Zalba
ResearchOpen Access23 Oct 2018
Communications Physics

Volume: 1, P: 1-7

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