2D devices with negative differential resistance are desired for multivalued logic applications, but they are normally limited by low current densities and operational frequency. Here, the authors report graphene/hexagonal boron nitride/graphene resonant tunnelling transistors with room temperature peak current density up to 2700 μA/μm2 and operational frequencies up to 11 GHz.
- Zihao Zhang
- Baoqing Zhang
- Aimin Song
