Formation of a strained Si membrane with oxidation-induced residual strain by releasing a host Si substrate of a silicon-on-insulator (SOI) wafer is demonstrated. To do this, we construct suspended Si/SiO2 structures and induce over 0.5% tensile strain on the top Si membrane. The fabricated thin-film transistor (TFTs) with strained Si channels are transferred on plastics using a roll-based transfer technique, and they exhibit a mobility enhancement factor of 1.2–1.4 in comparison with an unstrained Si TFT.
- Wonho Lee
- Yun Hwangbo
- Jong-Hyun Ahn
