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Superconductivity in Sr-doped La3Ni2O7 thin films

Nature Materials volume 24, pages 1756–1762 (2025)Cite this article

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Abstract

Recent studies have demonstrated ambient pressure superconductivity in compressively strained La3Ni2O7 thin films, yet the phase diagram of heterovalent doping—critical for advancing the field—remains underexplored. Here we report superconductivity in Sr2+-doped La3–xSrxNi2O7 films. The superconducting transition temperature (Tc) follows an incomplete dome-like profile, maintaining similar Tc values across a wide doping range (0 ≤ x ≤ 0.21) before diminishing near x ≈ 0.38. Optimally doped films achieve a Tc value of ~42 K, with a high critical current (Jc > 1.4 kA cm−2 at 2 K) and upper critical fields (μ0Hc,∥(0) = 83.7 T, μ0Hc,⟂(0) = 110.3 T). Scanning transmission electron microscopy reveals that oxygen vacancies predominantly occupy planar NiO2 sites—unlike apical-site vacancies in bulk samples—due to compressive strain. Additionally, the elongated out-of-plane Ni–O bonds, exceeding those in pressurized bulk samples by 4%, likely weaken the interlayer \({d}_{{z}^{2}}\) coupling and contribute to the reduced Tc in strained films.

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Fig. 1: Structural properties and superconductivity of La3−xSrxNi2O7 thin films.
Fig. 2: STEM characterizations of a superconducting La2.79Sr0.21Ni2O7 film.
Fig. 3: Transport properties of La2.91Sr0.09Ni2O7 thin films.
Fig. 4: Proposed phase diagram of La3–xSrxNi2O7 thin films.

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Source data are provided with this paper. Any additional data that support the findings of this study are available from the corresponding authors upon request.

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Acknowledgements

This work was supported by the National Key R&D Program of China (grant numbers 2022YFA1402502 and 2021YFA1400400), the National Natural Science Foundation of China (grant numbers 12434002, U24A2011, 12204394, 123B2051 and 52302181) and the Natural Science Foundation of Jiangsu Province (grant number BK20233001). D.J. acknowledges the start-up grant from the Department of Applied Physics, Hong Kong Polytechnic University (grant number 1-BD6B) and the General Research Fund (grant numbers 15303923 and 15307224) from the Hong Kong Research Grants Council. H.S. acknowledges the China National Postdoctoral Program for Innovative Talents (grant number BX20230152), the China Postdoctoral Science Foundation (grant number 2024M751368) and the Natural Science Foundation of Jiangsu Province (grant number BK20241189).

Author information

Author notes

  1. These authors contributed equally: Bo Hao, Maosen Wang, Wenjie Sun, Yang Yang.

Authors and Affiliations

  1. National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, China

    Bo Hao, Maosen Wang, Wenjie Sun, Zhangwen Mao, Shengjun Yan, Haoying Sun, Hongyi Zhang, Lu Han, Zhengbin Gu, Jian Zhou, Dianxiang Ji & Yuefeng Nie

  2. Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China

    Bo Hao, Maosen Wang, Wenjie Sun, Zhangwen Mao, Shengjun Yan, Haoying Sun, Hongyi Zhang, Lu Han, Zhengbin Gu, Jian Zhou, Dianxiang Ji & Yuefeng Nie

  3. Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China

    Yang Yang & Dianxiang Ji

  4. Jiangsu Physical Science Research Center, Nanjing, China

    Yuefeng Nie

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Contributions

Y.N. conceived the idea and directed the project. B.H. and M.W. synthesized the samples and characterized the crystalline structure with the help of S.Y., Z.M., L.H. and H.S. under the supervision of Z.G. and Y.N.; B.H., M.W., W.S. and H.Z. performed the electrical transport measurements and data analyses under the supervision of Y.N.; Y.Y. performed the STEM measurements under the supervision of D.J.; and J.Z. performed the DFT calculations. B.H., M.W., W.S. and Y.Y. wrote the paper under the supervision of J.Z., D.J. and Y.N. All authors discussed the data and contributed to the paper.

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Correspondence to Dianxiang Ji or Yuefeng Nie.

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Nature Materials thanks Danfeng Li and the other, anonymous, reviewer(s) for their contribution to the peer review of this work.

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Extended data

Extended Data Fig. 1 Growth and surface topography of the La2.91Sr0.09Ni2O7 thin film shown in Fig. 1d and Fig. 3.

a, Reflection high-energy electron diffraction (RHHED) patterns of as-grown La2.91Sr0.09Ni2O7 thin film taken along [110] and [100] directions. b-c, Atomic force microscopy of the treated SrLaAlO4 substrate (b) before growth and the La2.91Sr0.09Ni2O7 thin film (c) after growth. d, The RHEED intensity oscillations of a 3-u.c.-thick La2.91Sr0.09Ni2O7 film grown on SrLaAlO4 substrate, with the growth sequence of [(La,Sr)O] - [(La,Sr)O] - [NiO2] - [NiO2] - [(La,Sr)O].

Source data

Extended Data Fig. 2 Structural characterization of La2.79Sr0.21Ni2O7 films with varying La content.

a, XRD of 2.5-u.c.-thick La2.79Sr0.21Ni2O7 films on SrLaAlO4. b, The average and the standard deviation of the c-axis lattice constants. The optimal flux ratio for each Sr doping level x is calibrated using XRD measurements, by identifying the sample with a lattice constant of the smallest standard deviation (SD). The change of La content is controlled via La shutter time.

Source data

Extended Data Fig. 3 Relation between c-axis lattice constants and Sr doping levels x in La3-xSrxNi2O7 films at room temperature.

Only samples with a lattice constant of the small standard deviation are shown. The red squares represent the same sample in Fig. 4a.

Source data

Extended Data Fig. 4 Transport properties of a La2.79Sr0.21Ni2O7 thin film.

a, ρ(T) curves of La2.79Sr0.21Ni2O7 thin film under various magnetic fields applied perpendicular to the a-b plane of the film. b, Perpendicular upper critical fields extracted by the Tc,90% values (open circles). Solid lines represent Ginzburg-Landau fitting results. c, Electric field (E) versus current density (J) curves measured at 2-20 K.

Source data

Extended Data Fig. 5 Lattice constants of La3-xSrxNi2O7 films derived from STEM measurements.

Lattice constants of La3-xSrxNi2O7 on SLAO in samples with x = 0.21 (a) and x = 0 (b).

Extended Data Fig. 6 Scanning transmission electron microscopy characterizations of a superconducting La3Ni2O7 film.

a, High-angle annular dark-field (HAADF) image with a large field-of-view of a 3-u.c.-thick La3Ni2O7 film grown on a SrLaAlO4 substrate. Dash lines represent the interface between the film and the SrLaAlO4 substrate. b, HAADF image and atomic-resolution energy-dispersive X-ray spectroscopy (EDS) elemental maps (La, Ni, Al, Sr) of the same region. The yellow curves represent the profiles of atomic row-integrated elements intensity. The area between the dashed lines indicates the surface reconstruction region of the SrLaAlO4 substrate.

Extended Data Fig. 7 The optimalization of annealing conditions for La2.79Sr0.21Ni2O7 films.

a, The Tc,98% and Tc,50% of the La2.79Sr0.21Ni2O7 films annealed under different temperature, and related temperature-dependence of resistance (normalized at 200 K) (b). c, The Tc,98% and Tc,50% of the La2.79Sr0.21Ni2O7 films annealed at 380 °C with different time, and related temperature-dependence of resistance (normalized at 100 K) (d). Each series of experiments were conducted on separate pieces from the same sample with a fixed output power of the ozone generator.

Source data

Extended Data Fig. 8 Analysis of R-T curve of the La2.91Sr0.09Ni2O7 film shown in Fig. 1d.

Red curve is the temperature-dependent deviation of resistivity. The parallel-resistor formula fitting leads to parameters α0 = 0.363 mΩ·cm, α1 = 2.09×10−4 mΩ·cm/K, α2 = 1.52×10−5 mΩ·cm/K2, and ρsat = 1.46 mΩ·cm.

Source data

Extended Data Fig. 9 Relation between Tc,98% (Tc,50%) and Sr doping levels x in La3-xSrxNi2O7 films.

Same as that in Fig. 4b, circles (squares) represent the Tc,98% (Tc,50%) of samples.

Source data

Extended Data Table. 1 Calculated formation energies for three types of oxygen vacancies under varying in-plane biaxial strains
Full size table

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Hao, B., Wang, M., Sun, W. et al. Superconductivity in Sr-doped La3Ni2O7 thin films. Nat. Mater. 24, 1756–1762 (2025). https://doi.org/10.1038/s41563-025-02327-2

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