Six‐Fold Mobility Improvement for All‐Solution‐Processed Metal Oxide Thin Film Transistors Via a Controlled Humidity Annealing Process

Journal:
Advanced Functional Materials
Published:
DOI:
10.1002/adfm.202507594
Affiliations:
2
Authors:
5
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Institutions Authors Share
Tsinghua University, China
5.000000
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