In‐Plane Polarization Induced Depletion, Photovoltaic and Memory Effects in Ferroelectric Junction Field‐Effect Transistor

Journal:
Advanced Functional Materials
Published:
DOI:
10.1002/adfm.202507832
Affiliations:
2
Authors:
6
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Institutions Authors Share
Sichuan University (SCU), China
5.000000
 0.83
The Chinese University of Hong Kong (CUHK), China
1.000000
 0.17
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