Enhanced Device Characteristics of Hybrid-Channel (Poly-Si/IGO) Structures with Ga2O3 and Al2O3 Interlayers by Suppressing Oxidation-Induced Variability for Ultra-High-Density 3D NAND Flash Memory Applications

Journal:
Advanced Functional Materials
Published:
DOI:
10.1002/adfm.202510062
Affiliations:
4
Authors:
11
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Institutions Authors Share
Hanyang University (HYU), South Korea
8.000000
 0.73
Samsung Electronics Co., Ltd., South Korea
3.000000
 0.27
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