Mimicking Hypoxia in Solution-Processed TiO2/NiFe2O4 Heterointerface-Based Harsh Environment-Resistant Synaptic Memristor

Journal:
Advanced Functional Materials
Published:
DOI:
10.1002/adfm.202510156
Affiliations:
1
Authors:
3
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Institutions Authors Share
Indian Institute of Technology Jammu (IIT Jammu), India
3.000000
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