Enhancing Charge Transport and Fast Non‐Volatile Memory in 2D Tin‐Based Perovskite Transistors through Porphyrin‐like Additives

Journal:
Advanced Functional Materials
Published:
DOI:
10.1002/adfm.202510256
Affiliations:
5
Authors:
10
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Institutions Authors Share
National Taiwan University (NTU), Taiwan
8.000000
 0.80
National Synchrotron Radiation Research Center (NSRRC), Taiwan
1.000000
 0.10
Research Center for Applied Sciences, Academia Sinica, Taiwan
1.000000
 0.10
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