Tin Substitution Stabilizes 2D Perovskite Epitaxial Heterostructures for High‐Mobility, Hysteresis‐Free Field‐Effect Transistors

Journal:

Advanced Functional Materials

Published:

2025-08-07

DOI:

10.1002/adfm.202510358

Affiliations:

3

Authors:

19

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Institutions	Authors	Share
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, WUT, China	17.000000 17.000000	0.89
Institute of Hydrobiology (IHB), CAS, China	1.000000	0.05
State Key Laboratory of Molecular Engineering of Polymers, Fudan University, China	1.000000	0.05

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