Dual-Way Alternation Sensing Memristors Based on (BA)2(MA)3Pb4Br13 Ferroelectric Quantum Dots with Sub-0.16 V Switching for Broadband Image-Recognition Systems

Journal:
Advanced Functional Materials
Published:
DOI:
10.1002/adfm.202510543
Affiliations:
1
Authors:
7
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Institutions Authors Share
Hebei University (HBU), China
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