Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System

Journal:
Advanced Functional Materials
Published:
DOI:
10.1002/adfm.202511704
Affiliations:
5
Authors:
7
Go to article
Institutions Authors Share
Sungkyunkwan University (SKKU), South Korea
7.000000
 1.00
Interested in Nanotechnology?