2D Electron Gas-Induced the Lowered Tunneling Barrier and Ohmic Behavior Simultaneously in 2D Metal-Semiconductor Contacts

Journal:

Advanced Functional Materials

Published:

2025-09-03

DOI:

10.1002/adfm.202513567

Affiliations:

5

Authors:

6

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Institutions	Authors	Share
Nanjing University of Posts and Telecommunications (NUPT), China	2.000000	0.33
State Key Laboratory of Electrical Insulation and Power Equipment, XJTU, China	1.000000	0.17
Chizhou University, China	1.000000	0.17
Henan University of Science and Technology (HAUST), China	1.000000	0.17
Yangzhou University (YZU), China	1.000000	0.17

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