Silicon Nanowire Gate‐All‐Around Cold Source MOSFET With Ultralow Power Dissipation: A Machine‐Learning‐Hamiltonian Accelerated Design

Journal:
Advanced Functional Materials
Published:
DOI:
10.1002/adfm.202513807
Affiliations:
3
Authors:
8
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Institutions Authors Share
Fudan University, China
7.000000
 0.88
State Key Laboratory for Mechanical Behavior of Materials, XJTU, China
1.000000
 0.13
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