High‐Stability Ultrathin Oxide Transistors via Defect Engineering for High‐Performance Capacitorless DRAM

Journal:
Advanced Functional Materials
Published:
DOI:
10.1002/adfm.202514194
Affiliations:
2
Authors:
8
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Institutions Authors Share
Huazhong University of Science and Technology (HUST), China
6.000000
 0.75
Shanghai Jiao Tong University (SJTU), China
2.000000
 0.25
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