Oxide Memristor of Ag/Ag+ Doped V2O5 and SnO2 Bilayer Thin Film for Energy Efficient Memory, Logic and Neuromorphic Device Application

Journal:
Advanced Functional Materials
Published:
DOI:
10.1002/adfm.202514732
Affiliations:
2
Authors:
6
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Institutions Authors Share
Indian Institute of Technology (Banaras Hindu University), Varanasi (IIT BHU), India
4.000000
 0.67
Indian Institute of Technology Madras (IIT Madras), India
2.000000
 0.33
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