Self-Trapped Hole Migration and Defect-Mediated Thermal Quenching of Luminescence in α- and β-Ga2O3

Journal:

Advanced Functional Materials

Published:

2025-09-19

DOI:

10.1002/adfm.202517876

Affiliations:

6

Authors:

12

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Institutions	Authors	Share
Technische Universität Berlin (TU Berlin), Germany	5.000000	0.42
University of Oslo (UiO), Norway	2.500000	0.21
Leipzig University, Germany	1.500000	0.13
Paul Drude Institute for Solid State Electronics (PDI), Germany	1.000000	0.08
Leibniz-Institut für Kristallzüchtung im Forschungsverbund Berlin e.V. (IKZ), Germany	1.000000	0.08
Lawrence Livermore National Laboratory (LLNL), United States of America (USA)	1.000000	0.08

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