Quantifying and Overcoming Defect Limitations in High-Mobility Amorphous p-Type Tellurium Oxide Transistors

Journal:

Advanced Functional Materials

Published:

2025-09-26

DOI:

10.1002/adfm.202518364

Affiliations:

4

Authors:

9

Go to article

Institutions	Authors	Share
State Key Laboratory of Electronic Thin Films and Integrated Devices, UESTC, China	5.000000	0.56
Pohang University of Science and Technology (POSTECH), South Korea	2.000000	0.22
University of Electronic Science and Technology of China (UESTC), China	1.000000	0.11
Shandong University (SDU), China	1.000000	0.11

Interested in Electronics, Sensors and Digital Hardware?