Cation Disorder‐Driven d‐Band Center Engineering and Dual‐Mode Phonon Coupling Enable Ultrastable, High‐Rate Ksup+/sup Storage in Ge–Sn Chalcogenides

Journal:
Advanced Functional Materials
Published:
DOI:
10.1002/adfm.202518968
Affiliations:
1
Authors:
3
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Institutions Authors Share
National Tsing Hua University (NTHU), Taiwan
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